足球比分007

Information storage application technology
  • Manufacturing method of bad bit register for memory
    The present invention relates generally to memories, and more particularly to bad bit registers for memories. Some multi-time programmable non-volatile memories, such as spin torque mram, suffer from problems with inherent write-error-rate. This means that every time any bit is written, there is a non-zero probability that the bit will not be written to the correct state. Usually, the error rate of such errors is designed to be very low, such as 1e -...
  • Method for making deep learning in binary memristive network
    CROSS REFERENCE TO RELATED APPLICATIONS This application claims the benefit of US Provisional Application No. 62 / 509,423, filed May 22, 2017, the entire contents of which are hereby incorporated by reference. Background Memristors are passive non-linear double-ended electrical components. In a memristor, the resistance of a device depends on the history of the current (or the voltage applied to it) previously flowing through it. Therefore, the resistance of the memristor can be achieved by placing a voltage difference or voltage drop on it ...
  • Manufacturing method of qubit network security identification
    The present invention relates generally to superconducting devices. More specifically, the invention relates to qubit network security identification. In cryptography, the physical unclonable function (puf) is a physical entity implemented in a physical structure, which is easy to evaluate but difficult to predict. In addition, a single puf device must be easy to manufacture, but it is virtually impossible to replicate, even if the precise manufacturing process that produced it is known. In this regard, it is hardware that simulates one-way functionality. Although the name is "...
  • System, method and process for supporting data communication in a mobile platform
    Copyright Notice A portion of the disclosure of this patent document contains material which is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent Document or Records in the Patent and Trademark Office, but otherwise reserves all copyright rights The disclosed embodiments relate generally to operating a mobile platform, and more specifically, but not exclusively, to supporting data processing on a mobile platform. Back ...
  • Glass spacer and hard drive device manufacturing method
    The present invention relates to a ring-shaped glass spacer provided in a magnetic recording hard disk drive device so as to be in contact with a magnetic disk, and a hard disk drive device using the glass spacer. With the rise of cloud computing in recent years, many hard disk drive devices (hereinafter referred to as HDD devices) have been used in cloud-oriented data centers in order to increase the storage capacity. Along with this, in each HDD device, I also hope that the storage capacity is higher than before ...
  • Spacer and hard drive device manufacturing method
    The present invention relates to a ring-shaped spacer provided in a magnetic recording hard disk drive device so as to be in contact with a magnetic disk, and a hard disk device using the same. With the rise of cloud computing in recent years, many hard disk drive devices (hereinafter referred to as HDD devices) have been used in cloud-oriented data centers in order to increase the storage capacity. Along with this, each HDD device is also expected to have a larger storage capacity than before. ...
  • SOC-based disassembly-free eMMC debugging method and process
    The invention relates to the field of memory testing, in particular to a soc-based, disassembly-free emmc debugging method. As the demand for smart terminals further increases, the need for internal data persistent storage further increases, and as the capacity of roughand rapidly increases, the storage quality of roughand continues to decline, so manufacturers prefer to use emmc instead of rawand as persistent storage. Program. Mass production shipment stage ...
  • Test method and process for low-voltage SRAM write half-select fault
    The invention belongs to the field of integrated circuit testing, and particularly relates to a test method for low-voltage sram write half-selection fault. The rapid development of artificial intelligence and the Internet of Things has driven a new generation of automotive electronics, smart homes, industrial manufacturing, etc. The demand for high-performance and low-power chips continues to increase, and at the same time, the requirements for memory are becoming higher and higher. The area on the chip has reached more than 70%, and this proportion is still rising. Due to high performance ...
  • Data reading method, device, electronic equipment, storage medium and process
    Embodiments of the present invention relate to reading data from a memory, and in particular, to a method, an apparatus, an electronic device, and a storage medium for reading data. Nand-flash memory is a type of flash memory, which has the advantages of large capacity, fast rewriting speed, etc., and is suitable for the storage of large amounts of data. Therefore, it has been more and more widely used in the industry. For example, embedded products include digital cameras , Mp3 Walkman memory card, small size ...
  • Flash memory and its programming method, programming system, memory system and process
    The present invention relates to a memory, and more particularly, to a flash memory and a programming method, a programming system, and a memory system thereof. The existing flash memory includes a plurality of memory cells, and the state of each memory cell includes a program state and an erase state. Among them, programming a memory cell is to program an erased state of the memory cell to a programming state. The specific programming method is: charge is injected into the gate of the memory cell by applying a programming pulse ...
  • Method, device, electronic device, storage medium and process for applying word line voltage
    Embodiments of the present invention relate to data processing in a memory, and in particular, to a method, an apparatus, an electronic device, and a storage medium for applying a word line voltage. Nand-flash memory is a type of flash memory, which has the advantages of large capacity, fast rewriting speed, etc., and is suitable for the storage of large amounts of data. Therefore, it has been more and more widely used in the industry. For example, embedded products include digital cameras. , Mp3 Walkman memory card, body ...
  • Method, device, electronic device, storage medium and process for applying word line voltage
    Embodiments of the present invention relate to memory data processing technologies, and in particular, to a method, an apparatus, an electronic device, and a storage medium for applying a word line voltage. Nand-flash memory is a type of flash memory, which has the advantages of large capacity, fast rewriting speed, etc., and is suitable for the storage of large amounts of data. Therefore, it has been more and more widely used in the industry. For example, embedded products include digital cameras. , Mp3 Walkman memory card, small size ...
  • Method, device, electronic device, storage medium and process for applying word line voltage
    Embodiments of the present invention relate to memory data processing technologies, and in particular, to a method, an apparatus, an electronic device, and a storage medium for applying a word line voltage. Nandflash memory is a type of flash memory, which has the advantages of large capacity, fast rewriting speed, etc., and is suitable for the storage of large amounts of data. Therefore, it has been more and more widely used in the industry. Walkman memory card, small size ...
  • Method, device, electronic device, storage medium and process for applying word line voltage
    Embodiments of the present invention relate to data processing in a memory, and in particular, to a method, an apparatus, an electronic device, and a storage medium for applying a word line voltage. Nand-flash memory is a type of flash memory, which has the advantages of large capacity, fast rewriting speed, etc., and is suitable for the storage of large amounts of data. Therefore, it has been more and more widely used in the industry. For example, embedded products include digital cameras. , Mp3 Walkman memory card, body ...
  • Semiconductor memory device, operation method thereof, memory system and process
    Various embodiments of the present disclosure relate generally to electronic devices. Specifically, the embodiments relate to a semiconductor memory device, an operation method thereof, and a memory system. The memory device may be formed as a two-dimensional structure in which strings are horizontally arranged to a semiconductor substrate, or a three-dimensional structure in which strings are vertically arranged on a semiconductor substrate. The three-dimensional semiconductor device is designed to overcome the limit of integration in the two-dimensional semiconductor device, and the three-dimensional semiconductor device can ...
  • Manufacturing method of semiconductor storage device
    This application claims priority based on Japanese Patent Application No. 2018-121151 (application date: June 26, 2018), and includes the entire content of the basic application by referring to the basic application. The present invention relates to a semiconductor memory device. A nand-type flash memory in which memory cells are three-dimensionally stacked is known. SUMMARY OF THE INVENTION The present invention provides a semiconductor memory device capable of operating at a high speed. Technical solutions for semiconductor storage ...
  • Three-dimensional resistive memory and its readout circuit
    The invention relates to a memory, in particular to a three-dimensional resistive memory and a readout circuit thereof. With the advent of the era of big data, ultra-high-density, ultra-large-capacity non-volatile storage technologies have become the key to achieving mass information storage. The traditional two-dimensional architecture that uses flat-scale scaling to increase storage density is far from meeting the demand for high-density storage due to the explosive growth of data. Three-dimensional integration has become the main trend in the development of future storage technologies. Among the many new ...
  • Semiconductor system and its operation method and process
    Various embodiments of the present disclosure relate to semiconductor technology, and more particularly, to a nonvolatile memory device and a semiconductor system including the nonvolatile memory device. The electronic device includes a large number of electronic components, and the computer system includes a large number of semiconductor devices, each of which includes a semiconductor. The computer system may include a memory device. Dynamic random access memory (dram) due to its fast and stable speed storage and input ...
  • Method, equipment and process for protecting PUF generator with physical imitation function
    Embodiments of the present invention relate to a method and a device for protecting a physical imitation function generator. A physical imitation function (puf) is usually a physical structure within an integrated circuit that provides several corresponding outputs (e.g., responses) in response to an input (e.g., challenge / request) of the puf. Each puf provides one or more sets of request-response pairs. These request-response pairs provided by puf can be used to build integrated circuits ...
  • Data acquisition circuit, control method, device and process for reading data window
    The invention relates to a memory reading technology, in particular to a data acquisition circuit, a control method and device for reading a data window, and a memory controller. ddr memory controller for double-rate synchronous dynamic random access memory ddrxsdram (doubledatarate, referred to as "ddr";
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